Features: · Low collector-emitter saturation voltage· High collector current capability: IC and ICM· High collector current gain (hFE ) at high IC· Higher efficiency leading to less heat generation· Reduced PCB area requirements compared to DPAK.Application· Power management·CDC/DC converter·CSupp...
PBSS4350Z: Features: · Low collector-emitter saturation voltage· High collector current capability: IC and ICM· High collector current gain (hFE ) at high IC· Higher efficiency leading to less heat generation·...
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| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 60 | V |
| VCEO | collector-emitter voltage | open base | - |
50 |
V |
| VEBO | emitter-base voltage | open collector | - | 6 | V |
| IC | collector current (DC) | - | 3 | A | |
| ICM | average collector current | - | 5 | A | |
| IBM | peak base current | - | 1 | A | |
| Ptot | total power dissipation | Tamb 25 °C; notes1and3 |
- | 1.35 | W |
| Tamb 25 °C; notes2and3 | 2 | W | |||
| Tstg | storage temperature | -65 | +150 | °C | |
| Tj | junction temperature | - | 150 | °C | |
| Tamb | ambient temperature | -65 | +150 | °C |