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PBSS5240T

Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replacement for SOT89/SOT223 standard packaged transistor.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base vol...

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SeekIC No. : 004455666 Detail

PBSS5240T: Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replacement for SOT89/SOT223 standard packaged transistor.P...

PBSS5240T Data Sheet

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Part Number:
PBSS5240T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

· Low collector-emitter saturation voltage
· High current capability
· Improved device reliability due to reduced heat generation
· Replacement for SOT89/SOT223 standard packaged transistor.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base - -40 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC) - -2 A
ICM peak collector current limited by Tj max - -3 A
IB base current (DC) - -300 mA
Ptot total power dissipation Tamb 25 °C; note 1 - 300 mW
Tamb 25 °C; note 2 - 480 mW
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Tstg storage temperature -65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.


Description

PNP low VCEsat transistor PBSS5240T in a SOT23 plastic package.

NPN complement: PBSS4240T.


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