Features: •ESD protection of up to four lines•Very low diode capacitance•Low clamping voltage•Ultra low leakage current: IRM = 3 nA•ESD protection up to 12 kV•IEC 61000-4-2; level 4 (ESD)Application•Computers and peripherals•Audio and video equipment...
PESDxV4UW: Features: •ESD protection of up to four lines•Very low diode capacitance•Low clamping voltage•Ultra low leakage current: IRM = 3 nA•ESD protection up to 12 kV•IEC...
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|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| PPP | peak pulse power PESD3V3V4UW PESD5V0V4UW |
8/20 s | [1][2] | ||
| - - |
16 |
W | |||
| IPP | peak pulse current PESD3V3V4UW PESD5V0V4UW |
8/20 s | [1][2] | ||
|
- |
1.5 |
A | |||
| Tj | junction temperature |
- |
150 |
°C | |
| Tamb | ambient temperature |
-65 |
+150 |
°C | |
| Tstg | storage temperature |
-65 |
+150 |
°C | |