PF38F5060M0Y0C0

The PF38F5060M0Y0C0 is designed as one kind of StrataFlash cellular memory, PF38F5060M0Y0C0 features flexible, multi-partition read-while-program and read-while-erase capability, enabling background programming or erasing in one partition simultaneously with code execution or data reads in another partition.

Features of the PF38F5060M0Y0C0 are:(1)108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output;(2)Programmable WAIT configuration;(3)Customer-configurable output driver impedance;(4)1-Gbit device: Eight 128-Mbit partitions;(5)Power-transition erase/program lockout;(6)Absolute write protection with VPP = GND;(7)Automatic Power Savings mode;(8)Standby current: 60 A (typ) for 512-Mbit, 65 nm;(9)Core voltage: 1.7 V - 2.0 V;(10)0.8 mm pitch lead-free solder-ball.

The absolute maximum ratings of the PF38F5060M0Y0C0 can be summarized as:(1)Temperature under Bias Expanded:30 to +85 °C;(2)Storage Temperature: -65 to +125 °C;(3)F-VCC Voltage: -2.0 to VCCQ+2.0 V;(4)VCCQ and P-VCC Voltage: -2.0 to VCCQ+2.0 V;(5)F-VPP Voltage:2.0 to +11.5 V;(6)ISH Output Short Circuit Current: 100 mA;(7)VPPH Time: 80 Hours;(8)Block Program/Erase Cycles: Main Blocks: 100,000 Cycles.

The electrical characteristics of PF38F5060M0Y0C0 can be summarized as:(1)Input Load Current: ±1 A;(2)Output Leakage Current: ±1 A;(3)DPD: 2 to 30 A;(4)Average VCC Read: Asynchronous Single Word Read f = 5 MHz, (1 CLK): 25 to 30 mA;(5)VPP Read: 2 to 15 A;(6)VPP Program: 0.05 to 0.1 mA;(7)VPP Erase: 0.05 to 0.1 mA;(8)VPP Blank Check: 0.05 to 0.1 mA. If you want to know more information about PF38F5060M0Y0C0, please download the datasheet in www.seekic.com or www.chinaicmart.com .