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PH2729-25M

Features: · NPN Silicon Microwave Power Transistor· Common Base Configuration· Broadband Class C Operation· High Efficiency Interdigitated Geometry· Diffused Emitter Ballasting Resistors· Gold Metalization System· Internal Input and Output Impedance Matching· Hermetic Metal/Ceramic PackageSpecific...

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SeekIC No. : 004460235 Detail

PH2729-25M: Features: · NPN Silicon Microwave Power Transistor· Common Base Configuration· Broadband Class C Operation· High Efficiency Interdigitated Geometry· Diffused Emitter Ballasting Resistors· Gold Metal...

PH2729-25M Data Sheet

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Part Number:
PH2729-25M
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· NPN Silicon Microwave Power Transistor
· Common Base Configuration
· Broadband Class C Operation
· High Efficiency Interdigitated Geometry
· Diffused Emitter Ballasting Resistors
· Gold Metalization System
· Internal Input and Output Impedance Matching
· Hermetic Metal/Ceramic Package


Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 4.0 A
Total Power Dissipation
@ +25°C		 PTOT 120 W
Storage Temperature TSTG -65 to +200 °C
Junction Temperature Tj 200 °C



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