Features: `NPN Silicon Power Transistor`Common Base Configuration`Broadband Class C Operation`High Efficiency InterdigitatedGeometry`Diffused Emitter Ballasting Resistors`Gold Metalization System`Internal Input and Output Impedance Matching`Hermetic' FleWCeramic PackageSpecifications Para...
PH2931-135S: Features: `NPN Silicon Power Transistor`Common Base Configuration`Broadband Class C Operation`High Efficiency InterdigitatedGeometry`Diffused Emitter Ballasting Resistors`Gold Metalization System`In...
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|
Parameters |
Symbol |
Rating |
Unit |
| Collector-Emitter Voltage |
VCES |
80 |
V |
| Emitter-Base Voltage |
VEBO |
3.0 |
V |
| Collector Current (Peak) |
IC |
1.2 |
A |
| Total Power Dissipation |
PTOT |
580 |
W |
| Junction Temperature |
Tj |
200 |
°C |
| Storage Temperature |
Tstg |
-65 to +200 |
°C |