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PH3120L

Features: ·Low thermal resistance·Logic level gate drive·SO8 equivalent area footprint·Very low on-state resistanceApplication·DC-to-DC converters·Portable appliances·Switched-mode power supplies·Notebook computersPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drai...

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SeekIC No. : 004460261 Detail

PH3120L: Features: ·Low thermal resistance·Logic level gate drive·SO8 equivalent area footprint·Very low on-state resistanceApplication·DC-to-DC converters·Portable appliances·Switched-mode power supplies·No...

PH3120L Data Sheet

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Part Number:
PH3120L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low thermal resistance
·Logic level gate drive
·SO8 equivalent area footprint
·Very low on-state resistance


Application

·DC-to-DC converters
·Portable appliances
·Switched-mode power supplies
·Notebook computers


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 20 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 100 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 76 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 300 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 52 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 152 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 46.2 A;
tp = 0.32 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 		- 210 mJ



Description

PH3120L, Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.


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