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PH5330

Features: ·Logic level compatible·Low drive current·High-density mounting·Very low on-state resistance.Application·DC-to-DC converters·Computer motherboards·Switched mode power supplies.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj = ...

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SeekIC No. : 004460288 Detail

PH5330: Features: ·Logic level compatible·Low drive current·High-density mounting·Very low on-state resistance.Application·DC-to-DC converters·Computer motherboards·Switched mode power supplies.PinoutSpecif...

PH5330 Data Sheet

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Part Number:
PH5330
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Logic level compatible
·Low drive current
·High-density mounting
·Very low on-state resistance.


Application

·DC-to-DC converters
·Computer motherboards
·Switched mode power supplies.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 175 - 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 50 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 160 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 39 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 50 A



Description

N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package.

Product availability: PH5330 in SOT669 (LFPAK).


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