PH5330E,115 Selling Leads, Price trend , NXP Semiconductors, PH5330E,115 DataSheet download, circuit diagram from SeekIC.com

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PH5330E,115: MOSFET N-CH TRENCH 30V

PH5330E,115 Data Sheet

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Part Number:: PH5330E,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/4/28

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	80 A
Resistance Drain-Source RDS (on) :	0.0057 Ohms	Configuration :	Single Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-669	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 80 A
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 0.0057 Ohms
Package / Case : SOT-669

Parameters:

Technical/Catalog Information	PH5330E,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	2010pF @ 10V
Power - Max	62.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	21nC @ 5V
Package / Case	LFPak-4
FET Feature	Logic Level Gate
Drawing Number	568; SOT669; ; 4
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PH5330E,115 PH5330E,115 568 2348 2 ND 56823482ND 568-2348-2

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