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PHB10N40

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDIDMPDD/TmbVGSEASIASTj, Tstg Continuous drain currentPulsed drain currentTotal dissipationLinear derating factorGate-source voltageSingle pulse avalancheenergyPeak avalanche currentOperating junction andstorage temperat...

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PHB10N40: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDIDMPDD/TmbVGSEASIASTj, Tstg Continuous drain currentPulsed drain currentTotal dissipationLinear derating factorGate-so...

PHB10N40 Data Sheet

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Part Number:
PHB10N40
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ID
IDM
PD
D/Tmb
VGS
EAS
IAS
Tj, Tstg		 Continuous drain current
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Single pulse avalanche
energy
Peak avalanche current
Operating junction and
storage temperature range		 Tmb = 25 ; VGS = 10 V
Tmb = 100 ; VGS = 10 V
Tmb = 25
Tmb = 25
Tmb > 25
VDD 50 V; starting Tj = 25; RGS = 50 ;
VGS = 10 V
VDD 50 V; starting Tj = 25; RGS = 50 ;
VGS = 10 V		 -
-
-
-
-
-
-
-
- 55		 10.7
6.7
43
147
1.176
± 30
520
10
150		 A
A
A
W
W/K
V
mJ
A



Description

PHB10N40 N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.




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