Position: Home  > All Categories> Integrated Circuits (ICs) > PHB29N08T

PHB29N08T

Features: ·High noise immunity·Low on-state resistance.Application·Industrial motor control.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 75 V VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 75 V VG...

product image

PHB29N08T Picture
See larger image
SeekIC No. : 004460350 Detail

PHB29N08T: Features: ·High noise immunity·Low on-state resistance.Application·Industrial motor control.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) ...

PHB29N08T Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHB29N08T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·High noise immunity
·Low on-state resistance.


Application

·Industrial motor control.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 75 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 75 V
VGS gate-source voltage (DC) - ±30 V
ID drain current (DC) Tmb = 25 ; VGS = 11 V; Figure 2 and 3 - 27 A
Tmb = 100 ; VGS = 11 V; Figure 2 - 19.2 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 108 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 88 W
Tstg storage temperature +175
Tj junction temperature +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 27 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 108 A



Description

PHB29N08T N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP29N08T in SOT78 (TO-220AB)

PHB29N08T in SOT404 (D2-PAK).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Tapes, Adhesives
803
AC452-2
Undefined Category
VI-B63-IU
X27 589
Circuit Protection
A50QS75-4Y
F-17*77
Memory Cards, Modules
WT32
VTL5C7
View more