Features: · High-speed switching· No secondary breakdown· Very low on-resistance.Application· Motor and actuator driver· Power management· Synchronized rectificationPinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per channel VDS drain-source voltage (DC)N-channelP-...
PHC21025: Features: · High-speed switching· No secondary breakdown· Very low on-resistance.Application· Motor and actuator driver· Power management· Synchronized rectificationPinoutSpecifications SYMBOL ...
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| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per channel | |||||
| VDS | drain-source voltage (DC) N-channel P-channel |
- - |
30 -30 |
V V | |
| VGSO | gate-source voltage (DC) | open drain | - | ±20 | V |
| ID | drain current (DC) N-channel P-channel |
Ts 80 | - - |
3.5 -2.3 |
A A |
| IDM | peak drain current N-channel P-channel |
note 1 | - - |
14 -10 |
A A |
| Ptot | total power dissipation | Ts = 80 ; note 2 | - | 2 | W |
| Tamb = 25 ; note 3 | - | 2 | W | ||
| Tamb = 25 ; note 4 | - | 1 | W | ||
| Tamb = 25 ; note 5 | - | 1.3 | W | ||
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | - | 150 | ||
| Source-drain diode | |||||
| IS | source current (DC) N-channel P-channel |
Ts 80 | - - |
1.5 -1.25 |
A A |
| ISM | peak pulsed source current N-channel P-channel |
note 1 | - - |
6 -5 |
A A |
One PHC21025 N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package.