PHC21025,118

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.1 Ohms
Continuous Drain Current : 3.5 A, - 2.3 A


Parameters:

Technical/Catalog Information	PHC21025,118
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.5A, 2.3A
Rds On (Max) @ Id, Vgs	100 mOhm @ 2.2A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 20V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	568; SOT96; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHC21025,118 PHC21025,118