PHC2300,118

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : +/- 300 V
Continuous Drain Current : 340 mA, - 235 mA
Resistance Drain-Source RDS (on) : 6 Ohms at 10 V, 17 Ohms at - 10 V
Package / Case : SOT-96-8


Parameters:

Technical/Catalog Information	PHC2300,118
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	340mA
Rds On (Max) @ Id, Vgs	6 Ohm @ 170mA, 10V
Input Capacitance (Ciss) @ Vds	102pF @ 50V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6.24nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	568; SOT96; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHC2300,118 PHC2300,118