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PHN1013

Features: · Very low on-state resistance.Application· DC to DC converters· General purpose switching applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Continuous drain-source voltage - 30 V VDG Drain-gate voltage RGS = 20 k - 30 V VGS Gate-so...

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SeekIC No. : 004460551 Detail

PHN1013: Features: · Very low on-state resistance.Application· DC to DC converters· General purpose switching applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Continuo...

PHN1013 Data Sheet

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Part Number:
PHN1013
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Very low on-state resistance.


Application

· DC to DC converters
· General purpose switching applications.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Continuous drain-source voltage   - 30 V
VDG Drain-gate voltage RGS = 20 k - 30 V
VGS Gate-source voltage   - ± 20 V
ID drain current (DC) Tamb = 25 ; tp 10 s Tamb = 70 ; tp 10 s - 10 8 A A
IDM peak drain current Tamb = 25 - 50 A
Ptot total power dissipation Tamb = 25 Tamb = 70 - 2.5 1.6 W W
Tstg storage temperature   -55 +150
Tj operating junction temperature   -55 +150



Description

PHN1013 N-channel enhancement mode logic level field-effect power transistor using 'trench' technology, in an 8-pin plastic SOT96-1 (SO8) package.




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