Features: • 'Trench' technology • Low on-state resistance• Fast switching • Low-profile surface mount package • Logic level compatibleApplication• High frequency computer motherboard d.c. to d.c. convertersThe PHN1018 is supplied in the SOT96-1 (SO8) surface mou...
PHN1018: Features: • 'Trench' technology • Low on-state resistance• Fast switching • Low-profile surface mount package • Logic level compatibleApplication• High frequency ...
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| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | Drain-source voltage | Tj = 25 to 150 | - | 25 | V |
| VDGR | Drain-gate voltage | Tj = 25 to 150; RGS = 20 k | - | 25 | V |
| VGS | Gate-source voltage(DC) | - | ± 15 | V | |
| VGSM | Gate-source voltage (pulse peak value) | - | ± 20 | V | |
| ID | Drain current (tp 10 s) | Ta = 25 Ta = 70 | - | 9.6 7.7 | A A |
| IDM | Drain current (pulse peak value) | Ta = 25 | - | 38 | A |
| Ptot | Total power dissipation | Ta = 25 Ta = 70 | - | 2.5 1.6 | W W |
| Tj, Tstg | Operating junction and storage temperature | - | -55 | 150 |
N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using 'trench'technology.