MFG:PHILIPS Package Cooled:03+ D/C:220
MFG: PHILIPS
Package Cooled: 03+
D/C: 220
Description: N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'tren...
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 5 V Tmb = 100 ;VGS = 5 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
30 30 ± 15 42 30 168 86 175 |
V V V A A A W |
PHP42N03LT
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