MFG:PHILIPS Package Cooled:03+ D/C:220
MFG: PHILIPS
Package Cooled: 03+
D/C: 220
Description: N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage (DC) Gate-source voltage (pulse peak value) Drain current (DC) Drain current (pulse peak value) Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tj 150 Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - - 55 |
25 25 ± 15 ± 20 55 38 220 103 175 |
V V V V A A A W |
PHP55N03LT
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