MFG:SOT78/TO-220AB Package Cooled:7850 D/C:PH
MFG: SOT78/TO-220AB
Package Cooled: 7850
D/C: PH
Description: N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Pr...
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | Tj =25 to 175 | - | 25 | V |
| VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 25 | V |
| VGS | gate-source voltage | - | ±15 | V | |
| VGSM | peak gate-source voltage | TP 50 s; pulsed; duty cycle = 25% Tj 150 | ±20 | ||
| ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 55 | A |
| Tmb = 100 ; VGS = 5 V; Figure 2 | - | 38 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 220 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 85 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | operating junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tmb = 25 | - | 55 | A |
| ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 220 | A |
| Avalanche ruggedness | |||||
| EAS | non-repetitive avalanche energy | unclamped inductive load; ID =55 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 |
- | 60 | mJ |
| IAS | non-repetitive avalanche current | unclamped inductive load; VDD 15 V; RGS = 50 ;VGS = 5 V;starting Tj = 25 | - | 55 | A |
PHP55N03LTA
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PHP55N03LT: N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology.
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