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MFG:PHILIPS  Package Cooled:03+  D/C:220  

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Part Number: PHP55N03T

 

MFG: PHILIPS

Package Cooled: 03+

D/C: 220

Description: N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 't...


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PHP55N03T General Description


N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.

PHP55N03T Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 k - 55 V
±VGS Gate-source voltage - - 20 V
ID Drain current (DC) Tmb = 25 - 55 A
ID Drain current (DC) Tmb = 100 - 38 A
IDM Drain current (pulse peak value) Tmb = 25 - 220 A
Ptot Total power dissipation Tmb = 25 - 103 W
Tstg, Tj Storage & operating temperature - -55 175

PHP55N03T Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

PHP55N03T datasheet

PHP55N03T
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