MFG:PH Package Cooled:01+ D/C:TO-220
MFG: PH
Package Cooled: 01+
D/C: TO-220
Description: N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'tren...
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology.
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MIN. |
UNIT |
|
VDS |
Repetitive peak drain-source voltage |
Tj = 25 °C to 150°C |
- |
35 |
V |
|
VDGR |
Drain-gate voltage |
Tj = 25 °C to 175°C;RGS = 20 k |
- |
35 |
V |
|
VGS |
Gate-source voltage |
- |
±15 |
V | |
|
VGSM |
Gate-source voltage (pulse peak value) |
Tj 150°C |
- |
±20 |
V |
|
ID
|
Drain current (DC) |
Tmb = 25 °C |
- |
55 |
A |
|
Tmb = 100 °C |
- |
38 |
A | ||
|
IDM
|
Drain current per MOSFET (pulse peak value) |
Tmb = 25 °C |
- |
220 |
A |
|
Ptot |
Total power dissipation |
Tmb = 25 °C |
- |
103 |
W |
|
Tstg,Tj |
Storage & operating temperature |
-55 |
175 |
°C |
PHP55N04LT
PDF/DataSheet Download
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The PHP55N03T features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. PHP55N03T is intended ...
MOSFET N-CH 25V 55A TO220AB
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability:PHP55N03LTA in a SOT78 (TO-220AB)PHB55N03LTA in a SOT404 (D2-PAK)PHD55N03LTA in a SOT428 (D-PAK).
PHP55N03LT: N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology.
MOSFET N-CH 55V 54A TO220AB
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