MFG:PHILIPS Package Cooled:03+ D/C:220
MFG: PHILIPS
Package Cooled: 03+
D/C: 220
Description: N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanch...
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and power high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VDS |
Drain-source voltage |
- |
- |
400 |
V |
|
VDGR |
Drain-gate voltage |
RGS = 20 W |
- |
400 |
V |
|
±VGS |
Gate-source voltage |
- |
- |
30 |
V |
|
ID |
Drain current (DC) |
Tmb = 25 |
- |
6.5 4.1 |
A |
|
IDM |
Drain current (pulse peak value) |
Tmb = 100 |
- |
26 |
A |
IDR |
Source-drain diode current (DC) | Tmb = 25 |
- |
6.5 |
|
|
IDRM |
Drain current (pulse peak value) |
Tmb = 25 |
- |
26 |
A |
|
Ptot |
Total power dissipation |
Tmb = 25 |
- |
100 |
W |
Tstg |
Storage temperature | - |
-55 |
150 |
|
|
Tj |
Junction temperature |
- |
- |
150 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PHP5N40E
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