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PHP96NQ03LT

Features: ·Low gate charge·Low on-state resistance.Application·Optimized as a control FET in DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25 to 175 - 25 V VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS...

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SeekIC No. : 004460683 Detail

PHP96NQ03LT: Features: ·Low gate charge·Low on-state resistance.Application·Optimized as a control FET in DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain...

PHP96NQ03LT Data Sheet

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Part Number:
PHP96NQ03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:

·Low gate charge
·Low on-state resistance.


Application

·Optimized as a control FET in DC to DC converters.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj =25 to 175 - 25 V
VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS = 20 k - 25 V
VGS gate-source voltage   - ±15 V
VGSM gate-source voltage TP 50 s; pulsed; duty cycle = 25%;Tj 150   ±20  
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 65  
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 115 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s -

240

 A



Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP96NQ03LT in SOT78 (TO-220AB)

PHB96NQ03LT in SOT404 (D2-PAK)

PHD96NQ03LT in SOT428 (D-PAK).


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