Purchase PHT6N03LT, In-stock PHT6N03LT From SeekIC.
MFG:PHILIPS D/C:00+
Part Number: PHT6N03LT
MFG: PHILIPS
D/C: 00+
Description: N-channel enhancement mode logic level field-effect power transistor using 'trench' technology. The de...
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PHT6N03LT
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DataSheet
General Description
PHT6N03LT General Description
N-channel enhancement mode logic level field-effect power transistor using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dcconverters and general purpose switching applications.
The PHT6N03LT is supplied in the SOT223 surface mounting package.
PHT6N03LT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | Drain-source voltage | Tj = 25 °C to 150°C | - | 30 | V |
| VDGR | Drain-gate voltage | Tj = 25 °C to 150°C; RGS = 20 k | - | 30 | V |
| VGS | Gate-source voltage | - | ±13 | V | |
| ID | Continuous drain current | Tamb = 25 °C; VGS = 10 V Tamb = 100 °C; VGS = 10 V | - | 5.9 4.1 | A A |
| IDM | Pulsed drain current | Tamb = 25 °C | - | 23.6 | A |
| PD | Total power dissipation | Tamb = 25 °C | - | 1.8 | W |
| Tstg, Tj | Operating junction and storage temperature | - | -55 | 150 | °C |
PHT6N03LT Features
• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Surface mounting package
PHT6N03LT
PDF/DataSheet Download
- Datasheet: PHT6N03LT
- File Size: 54442 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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