MFG:PHI Package Cooled:SOT-223
MFG: PHI
Package Cooled: SOT-223
Description: N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable...
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology, the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | Drain-source voltage | - | - | 30 | V |
| VDGR | Drain-gate voltage | RGS = 20 kW | - | 30 | V |
| ±VGS | Gate-source voltage | - | - | 16 | V |
| ID | Drain current (DC) | Tsp = 25 °C Tamb = 25 °C | - | 12.8 5.9 | A A |
| ID | Drain current (DC) | Tsp = 100 °C Tamb = 100 °C | - | 9 4.1 | A A |
| IDM | Drain current (pulse peak value) | Tsp = 25 °C Tamb = 25 °C | - | 51.2 23.6 | A A |
| Ptot | Total power dissipation | Tsp = 25 °C Tamb = 25 °C | - | 8.3 1.8 | W W |
| Tstg, Tj | Storage & operating temperature | - | -55 | 150 | °C |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PHT6N03T
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N-channel enhancement mode logic level field-effect power transistor using 'trench' technology. The PHT6N03LT has very low on-state resistance. It is intended for use in dc to dcconverters and general purposeswitching applications.The PHT6N03LT is supplied i...
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