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PHW80NQ10T

MOSFET N-CH TRENCH 100V 80A

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SeekIC No. : 00161374 Detail

PHW80NQ10T: MOSFET N-CH TRENCH 100V 80A

PHW80NQ10T Data Sheet

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Part Number:
PHW80NQ10T
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.015 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Continuous Drain Current : 80 A
Package / Case : TO-247
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance


Application

• d.c. to d.c. converters
• switched mode power supplies


Description

PHW80NQ10T N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench'technology.




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