PHX23NQ11T,127

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 16A
Gate Charge (Qg) @ Vgs: 22nC @ 10V
Power - Max: 41.6W
Packaging: Tube
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 830pF @ 25V
Package / Case: TO-220-3 Isolated Tab
Drain to Source Voltage (Vdss): 110V
Rds On (Max) @ Id, Vgs: 70 mOhm @ 13A, 10V


Parameters:

Technical/Catalog Information	PHX23NQ11T,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	110V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	70 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	830pF @ 25V
Power - Max	41.6W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	TO-220-3 Full Pack
FET Feature	Standard
Drawing Number	568; SOT186A; TO-220F; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHX23NQ11T,127 PHX23NQ11T,127