Features: • RDS(ON), VGS@10V,IDS@30A=6m• RDS(ON), VGS@4.5V,IDS@30A=9m• Advanced trench process technology• High Density Cell Design For Uitra Low On-Resistance• Specially Designed for DC/DC Converters and Motor Drivers• Fully Characterized Avalanche Voltage and ...
PJD06N03: Features: • RDS(ON), VGS@10V,IDS@30A=6m• RDS(ON), VGS@4.5V,IDS@30A=9m• Advanced trench process technology• High Density Cell Design For Uitra Low On-Resistance• Special...
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|
PARAMETER |
Symbol | Limi t | Uni ts |
| Drai n-Source Voltage | VDS | 25 | V |
| Gate-Source Voltage | VGS | +20 | V |
| Conti nuous Drai n Current | ID | 60 | A |
| Pulsed Drai n Current 1 ) | IDM | 280 | A |
| Maximum Power Di ssi pati on TA =25OC TA =75OC |
PD | 62.5 37.5 |
W |
| Operati ng Juncti on and Storage Temperature Range | TJ ,TSTG | -55 to + 150 | OC |
| Avalanche Energy with Single Pulse ID=27A, VDD=25V, L=0.5mH |
EAS | 180 | mJ |
| Junction-to-Case Thermal Resistance | RJC | 2.0 | OC/W |
| Junction-to Ambient Thermal Resistance(PCB mounted)2 | RJA | 50 | OC/W |