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PJD09N03

Features: • RDS(ON), VGS@10V,IDS@30A=9m• RDS(ON), VGS@4.5V,IDS@30A=12m• Advanced trench process technology• High Density Cell Design For Uitra Low On-Resistance• Specially Designed for DC/DC Converters and Motor Drivers• Fully Characterized Avalanche Voltage and...

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PJD09N03: Features: • RDS(ON), VGS@10V,IDS@30A=9m• RDS(ON), VGS@4.5V,IDS@30A=12m• Advanced trench process technology• High Density Cell Design For Uitra Low On-Resistance• Specia...

PJD09N03 Data Sheet

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Part Number:
PJD09N03
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• RDS(ON), VGS@10V,IDS@30A=9m
• RDS(ON), VGS@4.5V,IDS@30A=12m
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment substance directive request




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Specifications

PARAMETER

SYMBOL

Limit

Units

Drain-Source Voltage

VDS

25

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

IO

50

A

Pulsed Drain Current 1)

IDM

240

A

Maximum Power Dissipation TA = 25

PD

45

W

TA = 75

26

Operating Junction and Storage Temperature Range

TJ,TSTG

-50 to +150

Avalanche Energy with Single Pulse ID=23A,VDD=25V,L=0.5mH

EAS

130

mJ

Junction-to-Case Thermal Resistance

RJC

2.8

/W

Junction-to Ambient Thermal Resistance(PCB mounted)2

RJA

50

/W


Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t10 sec




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