PLB16006U

PLB16006U NPN silicon planar epitaxial microwave power transistor intended for use in common base class C power amplifiers. The PLB16006U transistor has a FO-229 glued cap metal ceramic flange package with base connected to flange.It has many unique features: The first one is input matching cell allows an easier desing of circuits. The second one is diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR. The third one is interdigitated structure provides high emitter efficiency . The forth one is gold metallization realizes very good stability of the characteristics and excellent lifetime. The fifth one is multicell geometry gives good balance of dissipated power and low thermal resistance. It can be applied to intended for use in common base class C power amplifiers at 1.6 GHz.

There are some limiting values about PLB16006U. Collector to base voltage(VCBO) is 40 V max(open emitter).Collectro-emitter voltage(VCEO) is 15 V max(open base). Emitter-base voltage(VEBO) is 3 V max(open collector). Collectro current(Ic) is 0.75 A max. Storage temperature range(Tstg) is -65 to 150.Junction temperature(Tj) is 200 max. Thermal resistance from mounting base to heatsink is 0.3K/W. Collector cut-off current(ICBO) is 45 A max when VCB is 32 A, IE is 0.Collector cut-off current(ICES) is 100A max when VCE is 28 V, RBE is 0 ohm. Emitter cut-off current(IEBO) is 4.5A max when VEB is 1.5 V and Ic is 0. Collectro-base breakdown voltage(V(BR)CBO) is 40 V min when Ic is 3 m and IE is 0. Collector-emitter breakdwon voltage(V(BR)CES) is 40 V min when Ic is 3 mA and RBE is 0 ohm.

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