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MFG:HITACHI D/C:2MOS: 30A450V

MFG:HITACHI D/C:2MOS: 30A450V

|
Item |
Symbol |
Rating |
Unit |
| Drain source voltage |
V(BR)DSS |
450 |
V |
| Gate source voltage |
V(BR)GSS |
±20 |
V |
| Drain current |
ID |
30 |
A |
| Drain peak current |
ID(peak) |
60 |
A |
| Body to drain diode reverse drain current |
IDR |
30 |
A |
| Body to drain diode reverse peak current |
IDR(peak) |
60 |
A |
| Channel dissipation |
Pch*1 |
200 |
W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
45 to +125 |
|
| Insulation dielectric |
Viso*2 |
2000 |
V |
Notes:
1. Value at Tc = 25
2. Base to terminals AC 1 minute
· Equipped with Power MOS FET
· Low on-resistance
· High speed switching
· Low drive current
· Wide area of safe operation
· Inherent parallel diode between source and drain
· Isolated base from Terminal
· Suitable for motor driver, switching regulator and etc.
· High Speed Power Switching
Pm45302f
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