Purchase PM45502C, In-stock PM45502C From SeekIC.
MFG:HITACHI D/C:2MOS: 45A500V
- Table of contents:
PM45502C
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Suppliers
DataSheet
General Description
PM45502C Maximum Ratings
| Item | Symbol | Rating | Unit |
| Drain source voltage | VDSS | 450 | V |
| Gate source voltage | VGSS | ±20 | V |
| Drain current | ID | 50 | A |
| Drain peak current | ID(peak) | 100 | A |
| Body to drain diode reverse drain current | IDR | 50 | A |
| Body to drain diode reverse drain peak current | IDR(peak) | 100 | A |
| Channel dissipation | Pch*1 | 300 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 45 to +125 | °C |
| Insulation dielectric | Visol*2 | 2000 | V |
2. Base to terminals AC minute
PM45502C Features
· Equipped with Power MOS FET
· Low on-resistance
· High speed switching
· Low drive current
· Wide area of safe operation
· Inherent parallel diode between source and drain
· Isolated base from Terminal
· Suitable for motor driver, switching regulator and etc.
· Low on-resistance
· High speed switching
· Low drive current
· Wide area of safe operation
· Inherent parallel diode between source and drain
· Isolated base from Terminal
· Suitable for motor driver, switching regulator and etc.
PM45502C Typical Application
·High Speed Power Switching
PM45502C
PDF/DataSheet Download
- Datasheet: PM45502C
- File Size: 51704 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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