Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7Vb) Using new Diode which is designed to get soft reverse recovery characteristics.• 3 75A, 600V Current-sense IGBT for 15kHz switching...
PM75RSE060: Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7Vb) Using new Diode which is designed to get...
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| Symbol | Parameter | Condition | Ratings | Unit |
| VCES | Collector-Emitter Voltage | VD = 15V, VCIN = 15V | 600 | V |
| ±IC | Collector Current | TC = 25°C | 75 | A |
| ±ICP | Collector Current (Peak) | TC = 25°C | 150 | AW |
| PC | Collector Dissipation | TC = 25°C(Note-1) | 225 | W |
| Tj | Junction Temperature | 20 ~ +150 | °C |
| Symbol | Parameter | Condition | Ratings | Unit |
| VCES | Collector-Emitter Voltage | VD = 15V, VCIN = 15V | 600 | V |
| IC | Collector Current | TC = 25°C | 30 | A |
| ICP | Collector Current (Peak) | TC = 25°C | 60 | A |
| PC | Collector Dissipation | TC = 25°C(Note-1) | 176 | W |
| VR(DC) | FWDi Rated DC Reverse Voltage | TC = 25°C | 600 | V |
| IF | FWDi Forward Current | TC = 25°C | 30 | A |
| Tj | Junction Temperature | 20 ~ +150 | °C |
| Symbol | Parameter | Condition | Ratings | Unit |
| VD | Supply Voltage | Applied between (VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) | 20 | V |
| VCIN | Input Voltage A | pplied between (UP, VP, WP, UN, VN, WN, Br) | 20 | V |
| VFO | Input Voltage | Applied between (UP, VP, WP, UN, VN, WN, Br) | 20 | V |
| IFO | Fault Output Current | Sink current at UFO, VFO, WFO, FO terminals | 20 | mA |