PMBFJ112,215

Forward Transconductance gFS (Max / Min) :
Maximum Drain Gate Voltage :
Continuous Drain Current :
Maximum Operating Temperature :
Configuration : Single
Transistor Polarity : N-Channel
Packaging : Reel
Power Dissipation : 300 mW
Mounting Style : SMD/SMT
Package / Case : SOT-23
Resistance Drain-Source RDS (on) : 50 Ohms
Drain Source Voltage VDS : 40 V
Gate-Source Cutoff Voltage : - 5 V to - 1 V
Gate-Source Breakdown Voltage : - 40 V
Drain Current (Idss at Vgs=0) : 5 mA


Parameters:

Technical/Catalog Information	PMBFJ112,215
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Drain (Idss) @ Vds (Vgs=0)	5mA @ 15V
Gate to Source Voltage (Vgs Max)	*
Input Capacitance (Ciss) @ Vds	6pF @ 10V (VGS)
Power - Max	300mW
Packaging	Tape & Reel (TR)
Package / Case	SST3 (SOT-23-3)
Voltage - Cutoff (VGS off) @ Id	5V @ 1A
Voltage - Breakdown (V(BR)GSS)	40V
Resistance - RDS(On)	50 Ohm
Current Drain (Id) - Max	-
Drawing Number	568; SOT23; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PMBFJ112,215 PMBFJ112,215