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PMWD26UN,518

MOSFET N-CH TRENCH DL 20V 8TSSOP

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SeekIC No. : 003429799 Detail

PMWD26UN,518: MOSFET N-CH TRENCH DL 20V 8TSSOP

PMWD26UN,518 Data Sheet

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Part Number:
PMWD26UN,518
Mfg:
Supply Ability:
5000

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Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25° C: 7.8A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) @ Vgs: 23.6nC @ 4.5V Drain Current (Idss at Vgs=0) : 8 mA to 20 mA
Input Capacitance (Ciss) @ Vds: 1366pF @ 16V Power - Max: 3.1W
Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP    

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Manufacturer: NXP Semiconductors
Series: TrenchMOS™
Current - Continuous Drain (Id) @ 25° C: 7.8A
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) @ Vgs: 23.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1366pF @ 16V


Parameters:

Technical/Catalog InformationPMWD26UN,518
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C7.8A
Rds On (Max) @ Id, Vgs30 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds 1366pF @ 16V
Power - Max3.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs23.6nC @ 4.5V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Drawing Number568; SOT530-1; PW, TT, DH, DP; 8
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PMWD26UN,518
PMWD26UN,518
568 2363 6 ND
56823636ND
568-2363-6



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