Photodetector Transistors Phototransistor
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| Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 100 nA |
| Package / Case : | T-1 3/4 |
| Parameter | Symbol | Rating | Units |
| Collector-Emitter Voltage | VCEO |
30 | V |
| Emitter-Collector-Voltage | VECO |
5 | V |
| Collector current | IC | 20 | mA |
| Operating temperature Range | Topr |
-25 ~ +85 | |
| Storage Temperature Range | Tstg | -40 ~ +85 | |
| Lead Soldering Temperature (1/16 inch from body for 5 sec.) |
Tsol |
260 | |
Power Dissipation at (or below) 25 Free Air Temperature |
Pc | 100 | mW |