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PTF080101SV1

Transistors RF MOSFET Power Hi Pwr RF LDMOS FET 10 W, 860-960 MHz

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SeekIC No. : 00220767 Detail

PTF080101SV1: Transistors RF MOSFET Power Hi Pwr RF LDMOS FET 10 W, 860-960 MHz

PTF080101SV1 Data Sheet

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Part Number:
PTF080101SV1
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 200 C
Package / Case : 32259 Packaging : Reel    

Description

Transistor Polarity :
Frequency :
Gain :
Output Power :
Continuous Drain Current :
Configuration : Single
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Maximum Operating Temperature : + 200 C
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Package / Case : 32259


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