Purchase PTF080601, In-stock PTF080601 From SeekIC.
MFG:INFINEON
Part Number: PTF080601
MFG: INFINEON
Description: The PTF080601 is a 60W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the ...
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PTF080601
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DataSheet
General Description
PTF080601 General Description
The PTF080601 is a 60W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
PTF080601 Maximum Ratings
| Parameter | Symbol | Value | Unit | |
| Drain-Source Voltage | VDSS | 65 | Vdc | |
| Gate-Source Voltage | VGS | 0.5 to +12 | Vdc | |
| Operating Junction Temperature | TJ | 200 | °C | |
|
Total Device Dissipation Above 25°C derate by |
PTF080601A | PD |
180 1.03 |
Watts W/°C |
|
Total Device Dissipation Above 25°C derate by |
PTF080601E | PD |
195 1.11 |
Watts W/°C |
| Storage Temperature Range | TSTG | 40 to +150 | °C | |
| Thermal Resistance (TCASE = 70°C, 130 W CW) |
PTF080601A PTF080601E |
RqJC RqJC |
0.972 0.897 |
°C/W °C/W |
PTF080601 Features
• Broadband internal matching
• Typical EDGE performance
- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P1dB = 90 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
• Typical EDGE performance
- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P1dB = 90 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
PTF080601
PDF/DataSheet Download
- Datasheet: PTF080601
- File Size: 300786 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
- ·PTF080101
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- LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
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- ·PTF080101S
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- LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
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- ·PTF080451
- INFINEON [Infineon Technologies AG]
- LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
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- ·PTF080451E
- INFINEON [Infineon Technologies AG]
- LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
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- ·PTF080601A
- INFINEON [Infineon Technologies AG]
- LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
- 300786 KB
- ·PTF080601E
- INFINEON [Infineon Technologies AG]
- LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
- 300786 KB
- ·PTF080601F
- INFINEON [Infineon Technologies AG]
- LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
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- ·PTF080901
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PTF080601 Relative Products
PTF080451
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
PTF080101
The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
PTF 102028
The PTF 102028 is an 18watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. PTF 102028 operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reli...
PTF 102027
The PTF 102027 is a 40watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures excellent device lifetime and reliability.
PTF 10195
The PTF 10195 is an internally matched 125watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This PTF 10195 operates at 53% efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and rel...
PTF 10193
The PTF 10193 is an internally matched, 12watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This PTF 10193 operates at 60% efficiency with 18 dB typical gain. Nitride surface passivation and full gold metallization ...
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GENERAL PURPOSE TRANSISTOR ARRAYS
