Transistors RF MOSFET Power RFP-LDMOS GLDMOS3&7
PTF180301EV1: Transistors RF MOSFET Power RFP-LDMOS GLDMOS3&7
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Drain-Source Breakdown Voltage : | 65 V | Gate-Source Breakdown Voltage : | - 0.5 V to + 12 V |
| Maximum Operating Temperature : | + 200 C | Package / Case : | 30265 |
| Packaging : | Tray |