PTF 10009

Features: • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• 100% lot traceabilitySpecifications Parameter Symbol ...

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PTF 10009 Picture
SeekIC No. : 004466853 Detail

PTF 10009: Features: • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated•...

floor Price/Ceiling Price

Part Number:
PTF 10009
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Performance at 960 MHz, 28 Volts
  - Output Power = 85 Watts
  - Power Gain = 13.0 dB Typ
  - Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% lot traceability



Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

270

1.54

Watts

W/°C

Storage Temperature Range

TSTG

-65 to 150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

0.65

°C/W




Description

The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. PTF 10009 operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability.




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