PTF 10019 Selling Leads, Price trend, PTF 10019 DataSheet download, circuit diagram from SeekIC.com

Features: • INTERNALLY MATCHED• Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications ...

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PTF 10019: Features: • INTERNALLY MATCHED• Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon...

PTF 10019 Data Sheet

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Part Number:: PTF 10019
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/28

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Product Details

Description

Features:

• INTERNALLY MATCHED
• Performance at 960 MHz, 28 Volts
- Output Power = 70 Watts
- Power Gain = 14.5 dB Typ
- Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability

Specifications

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	65	V_dc
Gate-Source Voltage	V_GS	±20	V_dc
Operating Junction Temperature	T_J	200	°C
Total Device Dissipation Above 25°C derate by	P_D	215 1.25	Watts W/°C
Storage Temperature Range	T_STG	40 to +150	°C
Thermal Resistance (T_CASE = 70°C)	R_qJC	0.8	°C/W

Description

The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

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PTF 10019

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