PU42C26

The PU42C26 is designed as silicon NPN epitaxial planar type.

PU42C26 has three features. The first one is it would have high DC current gain. The next one is it would have low collector to emitter saturation voltage. The next one is it would have 3 PNP elements. That are all the main features.

Some absolute maximum ratings of PU42C26 have been concluded into several points as follow. The first one is about its collector to base voltage which would be -60V. The next one is about its collector to emitter voltage which would be -60V. The next one is about its emitter to base voltage which would be -6V. The next one is about its peak collector current which would be -4A. The next one is about its collector current which would be -2A. The next one is about its power dissipation which would be 15W. The next one is about its junction temperature range which would be 150°C. The next one is about its storage temperature range which would be from -55 to +150°C.

Also there are some electrical characteristics of PU42C26 having been concluded into several points as follow. The first one is about its collector cutoff current which would be max -300uA with condition of Vce=-30V and Ib=0. The next one is about its emitter cutoff current which would be max -1mA with condition of Veb=-6V and Ic=0. The next one is about its collector to emitter voltage which would be min -60V with condition of Ic=±30mA and Ib=0. The next one is about its DC current gain which would be min 100 and max 280 with condition of Vce=-4V and Ic=-1A. The next one is collector to emitter saturation voltage which would be max -2.0V. The next one is about its transition frequency which would be typ 25MHz with condition of Vce=-10V, Ic=-0.5A and f=10MHz. And so on. For more information please contact us.