PZT651

The PZT651 is a kind of NPN silicon epitaxial transistor. It is intended for industrial and consumer applications. It is available in SOT223 package for medium power surface mount applications.

There is some information the features of PZT651. (1)high current: 2.0 Amp; (2)the SOT-23 package can be soldered using wave or reflow.; (3)available in 12 mm tape and reel; (4)PNP complement is PZT751T; (4)SOT223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.

The following is the absolute maximum ratings of PZT651 (TC=25, unless otherwise noted). (1):VCEO (collector-emitter voltage) is 60 Vdc; (2):VCBO (collector-base voltage) is 80 Vdc; (3):VEBO (emitter-base voltage) is 5.0 Vdc; (4):IC (collector current) is 2.0 Adc; (5):PD (total power dissipation @ TA=25) is 0.8 W and derate by 6.4 mW/ above 25; (6):TJ (junction temperature) is +150; (7):Tstg (storage temperature) is from -65 to +150; (8):RJA (thermal resistance from junctiontoambient in free air) is 156/W; (9):TL (maximum temperature for soldering, 10 sec) is 260.