Q4900J

The Q4900J is designed as CMOS logic arrays which series offer densities ranging from 2230 to 9250 equivalent 2-input NAND gates. It is optimized to provide a systems approach to high performance, low power semicuston military and commercial applications.

Q4900J has six features. The first one is it feature 1.5-micron silicon gate CMOS with two level metalization, offering high performance and up to 90% chip utilization. The next one is its series has six array sizes and it is one of them. The next one is it would have 162 I/O capability. The next one is it would have extensive MSI macros. The next one is it would have high speed with low power. The next one is it would be STTL & CMOS compatible. That are all the main features.

Some absolute maximum ratings of Q4900J have been concluded into several points as follow. The first one is about its supply voltage which would be from -0.3V to 7.0V. The next one is about its input voltage which would be from -0.3 to Vdd + 0.3V. The next one is about its output voltage which would be from -0.3 to Vdd + 0.3V. The next one is about its storage temperature range which would be from -65°C to +150°C. The next one is about its recommended operating conditions supply voltage which would be +5 ± 10%V. The next one is about its operating temperature range which would be from -55°C to +125°C.

Also there are some CMOS DC characteristics about Q4900J. The first one is about its input low voltage which would be max 1V. The next one is about its input high voltage which would be min 3.7V. The next one is about its schmitt trigger positive going threshold which would be max 4.2V. The next one is about its schmitt trigger negative going threshold which would be min 0.6V. And so on. For more information please contact us.