QCB50A40

The QCB50A40 is designed as dual darlington power transistor modules which have series connected high speed, high power darlington transistors. Each transistor has a reverse paralleled fast recovery diode. Its typical applications include motor control (VVVF), AC/DC servo, UPS, switching power supply, ultrasonic applications.

QCB50A40 has four features. The first one is Ic - 50A and Vcex would be 400/600V. The next one is it would have low saturation voltage for higher efficiency. The next one is it would have isolated mounting base. The next one is Vebs 10V for faster switching speed. That are all the main features.

Some absolute maximum ratings of QCB50A40 have been concluded into several points as follow. The first one is about its collector to base voltage which would be 400V. The next one is about its collector to emitter voltage which would be 400V. The next one is about its emitter to base voltage which would be 10V. The next one is about its emitter to base voltage which would be 10V. The next one is about its collector current which would be 50A. The next one is about its reverse collector current which would be 50A. The next one is about its base current which would be 3A. The next one is about its total power dissipation which would be 300W. The next one is about its junction temperature which would be from -40°C to +150°C. The next one is about its storage temperature range which would be from -40 to +125°C. The next one is about its isolation voltage which would be 2500V.

Also there are some electrical characteristics about QCB50A40. The first one is about its collector cutoff current which would be max 1.0mA. The next one is about its emitter cutoff current which would be max 300mA. The next one is about its DC current gain which would be min 75/100. And so on. For more information please contact us.