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QS6K1TR

MOSFET 2N-CH 30V 1A TSMT6

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SeekIC No. : 00151035 Detail

QS6K1TR: MOSFET 2N-CH 30V 1A TSMT6

QS6K1TR Data Sheet

floor Price/Ceiling Price

US $ .16~.43 / Piece | Get Latest Price
Part Number:
QS6K1TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.43
  • $.34
  • $.26
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 12 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 0.26 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSMT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Resistance Drain-Source RDS (on) : 0.26 Ohms
Package / Case : TSMT-6
Continuous Drain Current : 1 A


Parameters:

Technical/Catalog InformationQS6K1TR
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C1A
Rds On (Max) @ Id, Vgs238 mOhm @ 1A, 4.5V
Input Capacitance (Ciss) @ Vds 77pF @ 10V
Power - Max1.25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2.4nC @ 4.5V
Package / CaseTSMT6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names QS6K1TR
QS6K1TR



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