Features: ·Sub-harmonic Receiver·Integrated LNA, LO Buffer, Image Reject Mixer·+2.0 dBm LO Drive Level·2.3 dB Noise Figure·20.0 dB Image Rejection·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +4.5 VDC ...
R1005: Features: ·Sub-harmonic Receiver·Integrated LNA, LO Buffer, Image Reject Mixer·+2.0 dBm LO Drive Level·2.3 dB Noise Figure·20.0 dB Image Rejection·100% On-Wafer RF, DC and Noise Figure Testing·100% ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
|
Supply Voltage (Vd) |
+4.5 VDC |
| Supply Current (Id1,Id2) |
180, 165 mA |
| Gate Bias Voltage (Vg) |
+0.3 VDC |
| Input Power (RF Pin) |
0.0 dBm |
| Storage Temperature (Tstg) |
-65 to +165 |
| Operating Temperature (Ta) |
-55 to MTTF Table3 |
| Channel Temperature (Tch) |
MTTF Table3 |
Mimix Broadband's 19.0-26.0 GHz GaAs MMIC receiver has a noise figure of 2.5 dB and 20.0 dB image rejection across the band. The R1005 is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The R1005 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach process. The R1005 is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.