Purchase RBV810D, In-stock RBV810D From SeekIC.
- Table of contents:
RBV810D
-
Suppliers
DataSheet
General Description
RBV810D Maximum Ratings
| RATING | SYMBOL |
RBV 800D |
RBV 801D |
RBV 802D |
RBV 804D |
RBV 806D |
RBV 808D |
RBV 810D |
UNIT |
| Maximum Recurrent Peak Reverse Voltage | VRRM |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
| Maximum RMS Voltage | VRMS |
35 |
70 |
140 |
280 |
420 |
560 |
700 |
Volts |
| Maximum DC Blocking Voltage | VDC |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
| Maximum Average Forward Current Tc = 55 | IF(AV) |
8.0 |
Amps. | ||||||
| Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) |
IFSM |
300 |
Amps. | ||||||
| Current Squared Time at t < 8.3 ms. | I2t |
166 |
A2S | ||||||
| Maximum Forward Voltage per Diode at IF = 8.0 Amps. | VF |
1.0 |
Volts | ||||||
| Maximum DC Reverse Current Ta = 25 at Rated DC Blocking Voltage Ta = 100 |
IR |
10 |
A | ||||||
| IR(H) |
200 |
A | |||||||
| Typical Thermal Resistance (Note 1) | RJC |
2.2 |
/W | ||||||
| Operating Junction Temperature Range | TJ |
15 |
|||||||
| Storage Temperature Range | TSTG |
- 40 to + 150 |
|||||||
RBV810D Features
·High current capability
·High surge current capability
·High reliability
·Low reverse current
·Low forward voltage drop
·High case dielectric strength of 2000 VDC
·Ideal for printed circuit board
·Very good heat dissipation
·High surge current capability
·High reliability
·Low reverse current
·Low forward voltage drop
·High case dielectric strength of 2000 VDC
·Ideal for printed circuit board
·Very good heat dissipation
RBV810D
PDF/DataSheet Download
- Datasheet: RBV810D
- File Size: 20077 KB
- Manufacturer: EIC [EIC discrete Semiconductors]
- Click here to Download
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