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RDD020N60TL

MOSFET N-CH 600V 2A CPT3

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SeekIC No. : 003430572 Detail

RDD020N60TL: MOSFET N-CH 600V 2A CPT3

RDD020N60TL Data Sheet

floor Price/Ceiling Price

US $ .33~.33 / Piece | Get Latest Price
Part Number:
RDD020N60TL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • Unit Price
  • $.33
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: - DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: -
Power - Max: 20W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
FET Feature: Standard
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 2A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Power - Max: 20W
Manufacturer: Rohm Semiconductor
Supplier Device Package: CPT3


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