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RDN080N25FU6

MOSFET PWR MOSFET TR DRIVE VLT-4V

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SeekIC No. : 00164417 Detail

RDN080N25FU6: MOSFET PWR MOSFET TR DRIVE VLT-4V

RDN080N25FU6 Data Sheet

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Part Number:
RDN080N25FU6
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Quick Details

Drain-Source Breakdown Voltage : 250 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Mounting Style : Through Hole
Package / Case : TO-220FN Packaging : Bulk    

Description

Transistor Polarity :
Gate-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 250 V
Packaging : Bulk
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.38 Ohms
Package / Case : TO-220FN


Parameters:

Technical/Catalog InformationRDN080N25FU6
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs500 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 543pF @ 10V
Power - Max35W
PackagingBulk
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseTO-220FN-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RDN080N25FU6
RDN080N25FU6



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